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N Channel Mosfet Power Transistor IRF540NS 100V 33A 130W D2PAK MOSFET Fast Switching

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Shenzhen Koben Electronics Co., Ltd.

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N Channel Mosfet Power Transistor IRF540NS 100V 33A 130W D2PAK MOSFET Fast Switching

Brand Name : IOR

Model Number : IRF540NS

Certification : ROHS

Place of Origin : CHINA

MOQ : 20 pcs

Price : negotiate

Payment Terms : Western Union, T/T,Paypal

Supply Ability : Consultation

Delivery Time : 2-3 working days

Packaging Details : 800PCS/Standard Package

FET Type : N-Channel

Drain to Source Voltage : 100V

Operating Temperature : -55°C ~ 175°C

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IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching

Features

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Description

Advanced HEXFET® Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D2Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRF540NL) is available for low-

profile applications.

Product Attributes

FET Type	N-Channel
Technology	MOSFET
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	33A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	44 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1960pF @ 25V
FET Feature	-
Power Dissipation (Max)	130W (Tc)
Operating Temperature	-55°C ~ 175°C

Product Tags:

high power mosfet transistors

n channel mosfet transistor

Mosfet Power Transistor IRF540NS

N Channel Mosfet Power Transistor IRF540NS 100V 33A 130W D2PAK MOSFET Fast Switching Images

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